Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature

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Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature. / Frederiksen, Jacob Trier; Melcher, Pia Grethe; Veje, E.

I: Physical Review B. Condensed Matter and Materials Physics, Bind 58, Nr. 12, 15.09.1998, s. 8020-8024.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Frederiksen, JT, Melcher, PG & Veje, E 1998, 'Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature', Physical Review B. Condensed Matter and Materials Physics, bind 58, nr. 12, s. 8020-8024. https://doi.org/10.1103/PhysRevB.58.8020

APA

Frederiksen, J. T., Melcher, P. G., & Veje, E. (1998). Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature. Physical Review B. Condensed Matter and Materials Physics, 58(12), 8020-8024. https://doi.org/10.1103/PhysRevB.58.8020

Vancouver

Frederiksen JT, Melcher PG, Veje E. Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature. Physical Review B. Condensed Matter and Materials Physics. 1998 sep. 15;58(12):8020-8024. https://doi.org/10.1103/PhysRevB.58.8020

Author

Frederiksen, Jacob Trier ; Melcher, Pia Grethe ; Veje, E. / Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature. I: Physical Review B. Condensed Matter and Materials Physics. 1998 ; Bind 58, Nr. 12. s. 8020-8024.

Bibtex

@article{dbb7018d4cbe45e29f7ed24e471513b6,
title = "Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature",
abstract = "Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10–300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.8060.01) eV, independent of sample temperature. In contrast to this, some temperature variations are observed for the band offsets, reflecting qualitatively the temperature dependence of the fundamental band-gap energy of crystalline silicon. However, whereas the latterdecreases monotonically for increasing temperature, a maximum is observed at around 125 K for the conduction-band offset together with a corresponding minimum for the valence-band offset. The results are discussed with the conclusion that for the samples studied here, the electrical band gap in porous silicon is of a molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.",
author = "Frederiksen, {Jacob Trier} and Melcher, {Pia Grethe} and E. Veje",
year = "1998",
month = sep,
day = "15",
doi = "10.1103/PhysRevB.58.8020",
language = "English",
volume = "58",
pages = "8020--8024",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature

AU - Frederiksen, Jacob Trier

AU - Melcher, Pia Grethe

AU - Veje, E.

PY - 1998/9/15

Y1 - 1998/9/15

N2 - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10–300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.8060.01) eV, independent of sample temperature. In contrast to this, some temperature variations are observed for the band offsets, reflecting qualitatively the temperature dependence of the fundamental band-gap energy of crystalline silicon. However, whereas the latterdecreases monotonically for increasing temperature, a maximum is observed at around 125 K for the conduction-band offset together with a corresponding minimum for the valence-band offset. The results are discussed with the conclusion that for the samples studied here, the electrical band gap in porous silicon is of a molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

AB - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10–300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.8060.01) eV, independent of sample temperature. In contrast to this, some temperature variations are observed for the band offsets, reflecting qualitatively the temperature dependence of the fundamental band-gap energy of crystalline silicon. However, whereas the latterdecreases monotonically for increasing temperature, a maximum is observed at around 125 K for the conduction-band offset together with a corresponding minimum for the valence-band offset. The results are discussed with the conclusion that for the samples studied here, the electrical band gap in porous silicon is of a molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

U2 - 10.1103/PhysRevB.58.8020

DO - 10.1103/PhysRevB.58.8020

M3 - Journal article

VL - 58

SP - 8020

EP - 8024

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

ER -

ID: 34330829