The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires
Research output: Contribution to journal › Journal article › Research › peer-review
Original language | English |
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Article number | 1900134 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 13 |
Issue number | 8 |
Number of pages | 8 |
ISSN | 1862-6254 |
DOIs | |
Publication status | Published - 2 Aug 2019 |
Bibliographical note
[Qdev]
- band structure, bending deformation, charge transport, GaAs nanowires, strain engineering
Research areas
ID: 226305461