Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
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Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.
Original language | English |
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Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 6 |
Pages (from-to) | 3990-3994 |
Number of pages | 5 |
ISSN | 0021-8979 |
DOIs | |
Publication status | Published - 15 Sep 2003 |
- Faculty of Science
Research areas
ID: 113616