Principles of conduction and hydrophobic gating in K+ channels

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Principles of conduction and hydrophobic gating in K+ channels. / Jensen, Morten Ø; Borhani, David W; Lindorff-Larsen, Kresten; Maragakis, Paul; Jogini, Vishwanath; Eastwood, Michael P; Dror, Ron O; Shaw, David E.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 107, No. 13, 2010, p. 5833-8.

Research output: Contribution to journalJournal articleResearchpeer-review

Harvard

Jensen, MØ, Borhani, DW, Lindorff-Larsen, K, Maragakis, P, Jogini, V, Eastwood, MP, Dror, RO & Shaw, DE 2010, 'Principles of conduction and hydrophobic gating in K+ channels', Proceedings of the National Academy of Sciences of the United States of America, vol. 107, no. 13, pp. 5833-8. https://doi.org/10.1073/pnas.0911691107

APA

Jensen, M. Ø., Borhani, D. W., Lindorff-Larsen, K., Maragakis, P., Jogini, V., Eastwood, M. P., Dror, R. O., & Shaw, D. E. (2010). Principles of conduction and hydrophobic gating in K+ channels. Proceedings of the National Academy of Sciences of the United States of America, 107(13), 5833-8. https://doi.org/10.1073/pnas.0911691107

Vancouver

Jensen MØ, Borhani DW, Lindorff-Larsen K, Maragakis P, Jogini V, Eastwood MP et al. Principles of conduction and hydrophobic gating in K+ channels. Proceedings of the National Academy of Sciences of the United States of America. 2010;107(13):5833-8. https://doi.org/10.1073/pnas.0911691107

Author

Jensen, Morten Ø ; Borhani, David W ; Lindorff-Larsen, Kresten ; Maragakis, Paul ; Jogini, Vishwanath ; Eastwood, Michael P ; Dror, Ron O ; Shaw, David E. / Principles of conduction and hydrophobic gating in K+ channels. In: Proceedings of the National Academy of Sciences of the United States of America. 2010 ; Vol. 107, No. 13. pp. 5833-8.

Bibtex

@article{3f838baf928f4dadae35a293aa202db1,
title = "Principles of conduction and hydrophobic gating in K+ channels",
abstract = "We present the first atomic-resolution observations of permeation and gating in a K(+) channel, based on molecular dynamics simulations of the Kv1.2 pore domain. Analysis of hundreds of simulated permeation events revealed a detailed conduction mechanism, resembling the Hodgkin-Keynes {"}knock-on{"} model, in which translocation of two selectivity filter-bound ions is driven by a third ion; formation of this knock-on intermediate is rate determining. In addition, at reverse or zero voltages, we observed pore closure by a novel {"}hydrophobic gating{"} mechanism: A dewetting transition of the hydrophobic pore cavity-fastest when K(+) was not bound in selectivity filter sites nearest the cavity-caused the open, conducting pore to collapse into a closed, nonconducting conformation. Such pore closure corroborates the idea that voltage sensors can act to prevent pore collapse into the intrinsically more stable, closed conformation, and it further suggests that molecular-scale dewetting facilitates a specific biological function: K(+) channel gating. Existing experimental data support our hypothesis that hydrophobic gating may be a fundamental principle underlying the gating of voltage-sensitive K(+) channels. We suggest that hydrophobic gating explains, in part, why diverse ion channels conserve hydrophobic pore cavities, and we speculate that modulation of cavity hydration could enable structural determination of both open and closed channels.",
author = "Jensen, {Morten {\O}} and Borhani, {David W} and Kresten Lindorff-Larsen and Paul Maragakis and Vishwanath Jogini and Eastwood, {Michael P} and Dror, {Ron O} and Shaw, {David E}",
year = "2010",
doi = "10.1073/pnas.0911691107",
language = "English",
volume = "107",
pages = "5833--8",
journal = "Proceedings of the National Academy of Sciences of the United States of America",
issn = "0027-8424",
publisher = "The National Academy of Sciences of the United States of America",
number = "13",

}

RIS

TY - JOUR

T1 - Principles of conduction and hydrophobic gating in K+ channels

AU - Jensen, Morten Ø

AU - Borhani, David W

AU - Lindorff-Larsen, Kresten

AU - Maragakis, Paul

AU - Jogini, Vishwanath

AU - Eastwood, Michael P

AU - Dror, Ron O

AU - Shaw, David E

PY - 2010

Y1 - 2010

N2 - We present the first atomic-resolution observations of permeation and gating in a K(+) channel, based on molecular dynamics simulations of the Kv1.2 pore domain. Analysis of hundreds of simulated permeation events revealed a detailed conduction mechanism, resembling the Hodgkin-Keynes "knock-on" model, in which translocation of two selectivity filter-bound ions is driven by a third ion; formation of this knock-on intermediate is rate determining. In addition, at reverse or zero voltages, we observed pore closure by a novel "hydrophobic gating" mechanism: A dewetting transition of the hydrophobic pore cavity-fastest when K(+) was not bound in selectivity filter sites nearest the cavity-caused the open, conducting pore to collapse into a closed, nonconducting conformation. Such pore closure corroborates the idea that voltage sensors can act to prevent pore collapse into the intrinsically more stable, closed conformation, and it further suggests that molecular-scale dewetting facilitates a specific biological function: K(+) channel gating. Existing experimental data support our hypothesis that hydrophobic gating may be a fundamental principle underlying the gating of voltage-sensitive K(+) channels. We suggest that hydrophobic gating explains, in part, why diverse ion channels conserve hydrophobic pore cavities, and we speculate that modulation of cavity hydration could enable structural determination of both open and closed channels.

AB - We present the first atomic-resolution observations of permeation and gating in a K(+) channel, based on molecular dynamics simulations of the Kv1.2 pore domain. Analysis of hundreds of simulated permeation events revealed a detailed conduction mechanism, resembling the Hodgkin-Keynes "knock-on" model, in which translocation of two selectivity filter-bound ions is driven by a third ion; formation of this knock-on intermediate is rate determining. In addition, at reverse or zero voltages, we observed pore closure by a novel "hydrophobic gating" mechanism: A dewetting transition of the hydrophobic pore cavity-fastest when K(+) was not bound in selectivity filter sites nearest the cavity-caused the open, conducting pore to collapse into a closed, nonconducting conformation. Such pore closure corroborates the idea that voltage sensors can act to prevent pore collapse into the intrinsically more stable, closed conformation, and it further suggests that molecular-scale dewetting facilitates a specific biological function: K(+) channel gating. Existing experimental data support our hypothesis that hydrophobic gating may be a fundamental principle underlying the gating of voltage-sensitive K(+) channels. We suggest that hydrophobic gating explains, in part, why diverse ion channels conserve hydrophobic pore cavities, and we speculate that modulation of cavity hydration could enable structural determination of both open and closed channels.

U2 - 10.1073/pnas.0911691107

DO - 10.1073/pnas.0911691107

M3 - Journal article

C2 - 20231479

VL - 107

SP - 5833

EP - 5838

JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

SN - 0027-8424

IS - 13

ER -

ID: 37812360