Optical metrology for nanowires grown with molecular beam epitaxy
Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review
Semiconductor nanowires are important materials for quantum transport experiments and are used in research on qubits. Extended arrays of nanowires can be grown bottom-up by Molecular Beam Epitaxy (MBE). The full process involves several steps. When fabricating nanowires, a common practice is to follow a well-established recipe and only characterize the finalized materials. If the final wires are found to be flawed, the process must be repeated with new parameters. It is therefore desirable to have a characterization method to monitor the process before and after each fabrication step. Conventional characterization techniques such as SEM are time-consuming and, in some cases, damage the samples, e.g. before and after an electron beam lithography process. Scatterometry is fast, accurate, non-destructive and is already used in the semiconductor industry. In this work, it is demonstrated that the imaging scatterometry technique is capable of monitoring the MBE fabrication process of InAs-nanowire arrays during the different process steps. Relevant parameters such as thin film thickness, hole depth, and diameter, etc., are found with nm precision for a macroscopic area in a few minutes. Using this approach, we demonstrate that errors can be caught early in the process and ultimately save resources while assuring a high quality of the final material.
Original language | English |
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Title of host publication | Quantum Dots, Nanostructures, and Quantum Materials : Growth, Characterization, and Modeling XVII |
Editors | Diana L. Huffaker, Holger Eisele |
Number of pages | 8 |
Publisher | SPIE - International Society for Optical Engineering |
Publication date | 2020 |
Article number | 1129111 |
ISBN (Electronic) | 9781510633452 |
DOIs | |
Publication status | Published - 2020 |
Event | Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII 2020 - San Francisco, United States Duration: 5 Feb 2020 → … |
Conference
Conference | Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII 2020 |
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Land | United States |
By | San Francisco |
Periode | 05/02/2020 → … |
Sponsor | The Society of Photo-Optical Instrumentation Engineers (SPIE) |
Series | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 11291 |
ISSN | 0277-786X |
Bibliographical note
Publisher Copyright:
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
- Metrology, Molecular Beam Epitaxy, Nanowires, Scatterometry
Research areas
ID: 271555014