Nanosized lead Inclusions in Silicon produced by Ion Implantation
Research output: Contribution to journal › Journal article › Research › peer-review
Standard
Nanosized lead Inclusions in Silicon produced by Ion Implantation. / Johnson, Erik; Johansen, Hans Allan; Sarholt-Kristensen, Leif.
In: Nucl. Instrum. Meth.B., No. 148, 1999, p. 1034-1038.Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Johnson, E, Johansen, HA & Sarholt-Kristensen, L 1999, 'Nanosized lead Inclusions in Silicon produced by Ion Implantation', Nucl. Instrum. Meth.B., no. 148, pp. 1034-1038.
APA
Johnson, E., Johansen, H. A., & Sarholt-Kristensen, L. (1999). Nanosized lead Inclusions in Silicon produced by Ion Implantation. Nucl. Instrum. Meth.B., (148), 1034-1038.
Vancouver
Johnson E, Johansen HA, Sarholt-Kristensen L. Nanosized lead Inclusions in Silicon produced by Ion Implantation. Nucl. Instrum. Meth.B. 1999;(148):1034-1038.
Author
Bibtex
@article{c4bf3c7074c811dbbee902004c4f4f50,
title = "Nanosized lead Inclusions in Silicon produced by Ion Implantation",
author = "Erik Johnson and Johansen, {Hans Allan} and Leif Sarholt-Kristensen",
year = "1999",
language = "English",
pages = "1034--1038",
journal = "Nucl. Instrum. Meth.B.",
number = "148",
}
RIS
TY - JOUR
T1 - Nanosized lead Inclusions in Silicon produced by Ion Implantation
AU - Johnson, Erik
AU - Johansen, Hans Allan
AU - Sarholt-Kristensen, Leif
PY - 1999
Y1 - 1999
M3 - Journal article
SP - 1034
EP - 1038
JO - Nucl. Instrum. Meth.B.
JF - Nucl. Instrum. Meth.B.
IS - 148
ER -
ID: 187617