Hole spin coherence in a Ge/Si heterostructure nanowire
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Hole spin coherence in a Ge/Si heterostructure nanowire. / Higginbotham, Andrew P; Larsen, Thorvald Wadum; Yao, Jun; Yan, Hao; Lieber, Charles M; Marcus, Charles M; Kuemmeth, Ferdinand.
In: Nano Letters, Vol. 14, No. 3582, 05.05.2014, p. 3582-3586.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Hole spin coherence in a Ge/Si heterostructure nanowire
AU - Higginbotham, Andrew P
AU - Larsen, Thorvald Wadum
AU - Yao, Jun
AU - Yan, Hao
AU - Lieber, Charles M
AU - Marcus, Charles M
AU - Kuemmeth, Ferdinand
N1 - Preprint available at http://arxiv.org/abs/1403.2093.
PY - 2014/5/5
Y1 - 2014/5/5
N2 - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
AB - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
U2 - 10.1021/nl501242b
DO - 10.1021/nl501242b
M3 - Journal article
C2 - 24797219
VL - 14
SP - 3582
EP - 3586
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 3582
ER -
ID: 109878587