Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing
Publikation: Bidrag til tidsskrift › Konferenceartikel › Forskning › fagfællebedømt
Using in-situ scanning tunneling microscopy (STM) we have investigated the evolution of Si(111)-7×7 surfaces, prepared under ultrahigh vacuum condition, upon Ar+ion sputtering and subsequent annealing. We have monitored how the surface atomic arrangement changes upon annealing of the sputtered Si(111)-7×7 surface. Sputtering renders the Si(111)-7×7 surface amorphous and rough. Annealing at 500 C causes no recrystallization, although the surface roughness is reduced. When the sample is annealed at 600 C, recrystallization starts producing short-range orders. Flat-top nanoislands with a height distribution appear. The top surface of these nanoislands is ordered; most islands have Si(111)-7×7 surface reconstruction, while there are also islands with other surface reconstructions, such as 5×5, 2×2 etc. Smaller silicon nanodots grow at the edges of these flat-top islands.
Originalsprog | Engelsk |
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Tidsskrift | Materials Today: Proceedings |
Vol/bind | 47 |
Sider (fra-til) | 1617-1620 |
DOI | |
Status | Udgivet - 2021 |
Begivenhed | 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020 - New Delhi, Indien Varighed: 5 nov. 2020 → 6 nov. 2020 |
Konference
Konference | 2020 National Conference on Recent Advances in Functional Materials, RAFM 2020 |
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Land | Indien |
By | New Delhi |
Periode | 05/11/2020 → 06/11/2020 |
Bibliografisk note
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