Scale-Dependent Optimized Homoepitaxy of InAs(111)A
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Scale-Dependent Optimized Homoepitaxy of InAs(111)A. / Zelzer, Steffen; Batabyal, Rajib; Dardzinski, Derek; Marom, Noa; Grove-Rasmussen, Kasper; Krogstrup, Peter.
I: Crystal Growth & Design, Bind 2022, Nr. 22,10, 30.08.2022, s. 5958-5965.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Scale-Dependent Optimized Homoepitaxy of InAs(111)A
AU - Zelzer, Steffen
AU - Batabyal, Rajib
AU - Dardzinski, Derek
AU - Marom, Noa
AU - Grove-Rasmussen, Kasper
AU - Krogstrup, Peter
PY - 2022/8/30
Y1 - 2022/8/30
N2 - We combined in situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) to simultaneously assess atomic scale impurities and the larger scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As2 flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macroscale and the atomic scale. In particular, we show that a pure step flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient surface with only a few remaining defects can be observed for a high density of hillocks. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale dependent, technologically relevant surface metrics. Finally, we map the separately optimized regions of the growth parameter space as a guide for future device engineering involving epitaxial InAs(111)A growth.
AB - We combined in situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) to simultaneously assess atomic scale impurities and the larger scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As2 flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macroscale and the atomic scale. In particular, we show that a pure step flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient surface with only a few remaining defects can be observed for a high density of hillocks. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale dependent, technologically relevant surface metrics. Finally, we map the separately optimized regions of the growth parameter space as a guide for future device engineering involving epitaxial InAs(111)A growth.
KW - INITIO MOLECULAR-DYNAMICS
KW - TOTAL-ENERGY CALCULATIONS
KW - SURFACE
KW - TRANSITION
KW - SIMULATION
KW - GAAS(001)
KW - GROWTH
KW - OXIDE
KW - INAS
U2 - 10.1021/acs.cgd.2c00582
DO - 10.1021/acs.cgd.2c00582
M3 - Journal article
VL - 2022
SP - 5958
EP - 5965
JO - Crystal Growth & Design
JF - Crystal Growth & Design
SN - 1528-7483
IS - 22,10
ER -
ID: 321269841