Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires
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Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. / Elalaily, Tosson; Kurtossy, Oliver; Scherubl, Zoltan; Berke, Martin; Fulop, Gergo; Lukacs, Istvan Endre; Kanne, Thomas; Nygard, Jesper; Watanabe, Kenji; Taniguchi, Takashi; Makk, Peter; Csonka, Szabolcs.
I: Nano Letters, Bind 21, Nr. 22, 24.11.2021, s. 9684-9690.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires
AU - Elalaily, Tosson
AU - Kurtossy, Oliver
AU - Scherubl, Zoltan
AU - Berke, Martin
AU - Fulop, Gergo
AU - Lukacs, Istvan Endre
AU - Kanne, Thomas
AU - Nygard, Jesper
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Makk, Peter
AU - Csonka, Szabolcs
PY - 2021/11/24
Y1 - 2021/11/24
N2 - Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying similar to +/- 23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.
AB - Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying similar to +/- 23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.
KW - field effect
KW - epitaxial superconductors
KW - nanowire
KW - gate-controlled supercurrent
KW - hot electron injection
KW - phonons
KW - MAGNETIC-FIELD
U2 - 10.1021/acs.nanolett.1c03493
DO - 10.1021/acs.nanolett.1c03493
M3 - Journal article
C2 - 34726405
VL - 21
SP - 9684
EP - 9690
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 22
ER -
ID: 298471168