Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
Publikation: Bidrag til bog/antologi/rapport › Konferencebidrag i proceedings › Forskning › fagfællebedømt
We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.
Originalsprog | Engelsk |
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Titel | 2019 IEEE International Electron Devices Meeting, IEDM 2019 |
Forlag | IEEE |
Publikationsdato | 2019 |
Artikelnummer | 8993580 |
ISBN (Elektronisk) | 9781728140315 |
DOI | |
Status | Udgivet - 2019 |
Begivenhed | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, USA Varighed: 7 dec. 2019 → 11 dec. 2019 |
Konference
Konference | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 |
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Land | USA |
By | San Francisco |
Periode | 07/12/2019 → 11/12/2019 |
Sponsor | IEEE Electron Devices Society (EDS) |
Navn | Technical Digest - International Electron Devices Meeting, IEDM |
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Vol/bind | 2019-December |
ISSN | 0163-1918 |
Links
- http://arxiv.org/pdf/1912.10884
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ID: 241595963