AlGaAs/GaAs single electron transistor fabricated without modulation doping
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Standard
AlGaAs/GaAs single electron transistor fabricated without modulation doping. / See , A.M. ; Klochan , O.; Micolich, A.P. ; Aagesen, Martin; Lindelof, Poul Erik.
I: Applied Physics Letters, Bind 96, Nr. 11, 19.03.2010, s. 112104.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
See , AM, Klochan , O, Micolich, AP, Aagesen, M & Lindelof, PE 2010, 'AlGaAs/GaAs single electron transistor fabricated without modulation doping', Applied Physics Letters, bind 96, nr. 11, s. 112104. https://doi.org/10.1063/1.3358388
APA
See , A. M., Klochan , O., Micolich, A. P., Aagesen, M., & Lindelof, P. E. (2010). AlGaAs/GaAs single electron transistor fabricated without modulation doping. Applied Physics Letters, 96(11), 112104. https://doi.org/10.1063/1.3358388
Vancouver
See AM, Klochan O, Micolich AP, Aagesen M, Lindelof PE. AlGaAs/GaAs single electron transistor fabricated without modulation doping. Applied Physics Letters. 2010 mar. 19;96(11):112104. https://doi.org/10.1063/1.3358388
Author
Bibtex
@article{856ba5e5f5c942728663f5507286cbc2,
title = "AlGaAs/GaAs single electron transistor fabricated without modulation doping",
author = "A.M. See and O. Klochan and A.P. Micolich and Martin Aagesen and Lindelof, {Poul Erik}",
year = "2010",
month = mar,
day = "19",
doi = "10.1063/1.3358388",
language = "English",
volume = "96",
pages = "112104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "11",
}
RIS
TY - JOUR
T1 - AlGaAs/GaAs single electron transistor fabricated without modulation doping
AU - See , A.M.
AU - Klochan , O.
AU - Micolich, A.P.
AU - Aagesen, Martin
AU - Lindelof, Poul Erik
PY - 2010/3/19
Y1 - 2010/3/19
U2 - 10.1063/1.3358388
DO - 10.1063/1.3358388
M3 - Journal article
VL - 96
SP - 112104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -
ID: 32192740