Tunneling broadening of vibrational sidebands in molecular transistors
Research output: Contribution to journal › Journal article › Research › peer-review
Standard
Tunneling broadening of vibrational sidebands in molecular transistors. / Flensberg, Karsten.
In: Physical Review B. Condensed Matter and Materials Physics, Vol. 68, 2003, p. 205323.Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Flensberg, K 2003, 'Tunneling broadening of vibrational sidebands in molecular transistors', Physical Review B. Condensed Matter and Materials Physics, vol. 68, pp. 205323.
APA
Flensberg, K. (2003). Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics, 68, 205323.
Vancouver
Flensberg K. Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics. 2003;68:205323.
Author
Bibtex
@article{79c46e1074c411dbbee902004c4f4f50,
title = "Tunneling broadening of vibrational sidebands in molecular transistors",
author = "Karsten Flensberg",
year = "2003",
language = "English",
volume = "68",
pages = "205323",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
}
RIS
TY - JOUR
T1 - Tunneling broadening of vibrational sidebands in molecular transistors
AU - Flensberg, Karsten
PY - 2003
Y1 - 2003
M3 - Journal article
VL - 68
SP - 205323
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
ER -
ID: 114015