Single-electron operations in a foundry-fabricated array of quantum dots
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Single-electron operations in a foundry-fabricated array of quantum dots. / Ansaloni, Fabio; Chatterjee, Anasua; Bohuslavskyi, Heorhii; Bertrand, Benoit; Hutin, Louis; Vinet, Maud; Kuemmeth, Ferdinand.
In: Nature Communications, Vol. 11, No. 1, 6399, 16.12.2020.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Single-electron operations in a foundry-fabricated array of quantum dots
AU - Ansaloni, Fabio
AU - Chatterjee, Anasua
AU - Bohuslavskyi, Heorhii
AU - Bertrand, Benoit
AU - Hutin, Louis
AU - Vinet, Maud
AU - Kuemmeth, Ferdinand
PY - 2020/12/16
Y1 - 2020/12/16
N2 - Silicon quantum dots are attractive for the implementation of large spin-based quantum processors in part due to prospects of industrial foundry fabrication. However, the large effective mass associated with electrons in silicon traditionally limits single-electron operations to devices fabricated in customized academic clean rooms. Here, we demonstrate single-electron occupations in all four quantum dots of a 2 x 2 split-gate silicon device fabricated entirely by 300-mm-wafer foundry processes. By applying gate-voltage pulses while performing high-frequency reflectometry off one gate electrode, we perform single-electron operations within the array that demonstrate single-shot detection of electron tunneling and an overall adjustability of tunneling times by a global top gate electrode. Lastly, we use the two-dimensional aspect of the quantum dot array to exchange two electrons by spatial permutation, which may find applications in permutation-based quantum algorithms. Semiconductor spin-qubits with CMOS compatible architectures could benefit from the industrial capacity of the semiconductor industry. Here, the authors make the first steps in demonstrating this by showing single electron operations within a two-dimensional array of foundry-fabricated quantum dots.
AB - Silicon quantum dots are attractive for the implementation of large spin-based quantum processors in part due to prospects of industrial foundry fabrication. However, the large effective mass associated with electrons in silicon traditionally limits single-electron operations to devices fabricated in customized academic clean rooms. Here, we demonstrate single-electron occupations in all four quantum dots of a 2 x 2 split-gate silicon device fabricated entirely by 300-mm-wafer foundry processes. By applying gate-voltage pulses while performing high-frequency reflectometry off one gate electrode, we perform single-electron operations within the array that demonstrate single-shot detection of electron tunneling and an overall adjustability of tunneling times by a global top gate electrode. Lastly, we use the two-dimensional aspect of the quantum dot array to exchange two electrons by spatial permutation, which may find applications in permutation-based quantum algorithms. Semiconductor spin-qubits with CMOS compatible architectures could benefit from the industrial capacity of the semiconductor industry. Here, the authors make the first steps in demonstrating this by showing single electron operations within a two-dimensional array of foundry-fabricated quantum dots.
KW - SPIN QUBIT
KW - GATE
U2 - 10.1038/s41467-020-20280-3
DO - 10.1038/s41467-020-20280-3
M3 - Journal article
C2 - 33328466
VL - 11
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 6399
ER -
ID: 255161150