InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices
Research output: Contribution to journal › Journal article › Research › peer-review
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InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. / Kousar, Bilal; Carrad, Damon J.; Stampfer, Lukas; Krogstrup, Peter; Nygard, Jesper; Jespersen, Thomas S.
In: Nano Letters, Vol. 2022, 04.11.2022, p. 8845-8851.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices
AU - Kousar, Bilal
AU - Carrad, Damon J.
AU - Stampfer, Lukas
AU - Krogstrup, Peter
AU - Nygard, Jesper
AU - Jespersen, Thomas S.
PY - 2022/11/4
Y1 - 2022/11/4
N2 - Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.
AB - Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.
KW - semiconductor
KW - superconductor hybrid
KW - molybdenum-rhenium
KW - indium arsenide
KW - nanowire
KW - tunnel spectroscopy
KW - Josephson junction
KW - JOSEPHSON-JUNCTIONS
KW - SUPERCURRENT
KW - SUPERCONDUCTIVITY
KW - EPITAXY
KW - GROWTH
KW - LENGTH
KW - GAP
U2 - 10.1021/acs.nanolett.2c02532
DO - 10.1021/acs.nanolett.2c02532
M3 - Journal article
C2 - 36332116
VL - 2022
SP - 8845
EP - 8851
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
ER -
ID: 326729211