Standard
Diluted Oxide Interfaces with Tunable Ground States. / Gan, Yulin; Christensen, Dennis Valbjorn; Zhang, Yu; Zhang, Hongrui; Krishnan, Dileep; Zhong, Zhicheng; Niu, Wei; Carrad, Damon James; Norrman, Kion; von Soosten, Merlin; Jespersen, Thomas Sand; Shen, Baogen; Gauquelin, Nicolas; Verbeeck, Johan; Sun, Jirong; Pryds, Nini; Chen, Yunzhong.
In:
Advanced Materials, Vol. 31, No. 10, 1805970, 08.03.2019.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Gan, Y, Christensen, DV, Zhang, Y, Zhang, H, Krishnan, D, Zhong, Z, Niu, W
, Carrad, DJ, Norrman, K, von Soosten, M, Jespersen, TS, Shen, B, Gauquelin, N, Verbeeck, J, Sun, J, Pryds, N & Chen, Y 2019, '
Diluted Oxide Interfaces with Tunable Ground States',
Advanced Materials, vol. 31, no. 10, 1805970.
https://doi.org/10.1002/adma.201805970
APA
Gan, Y., Christensen, D. V., Zhang, Y., Zhang, H., Krishnan, D., Zhong, Z., Niu, W.
, Carrad, D. J., Norrman, K., von Soosten, M., Jespersen, T. S., Shen, B., Gauquelin, N., Verbeeck, J., Sun, J., Pryds, N., & Chen, Y. (2019).
Diluted Oxide Interfaces with Tunable Ground States.
Advanced Materials,
31(10), [1805970].
https://doi.org/10.1002/adma.201805970
Vancouver
Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z et al.
Diluted Oxide Interfaces with Tunable Ground States.
Advanced Materials. 2019 Mar 8;31(10). 1805970.
https://doi.org/10.1002/adma.201805970
Author
Gan, Yulin ; Christensen, Dennis Valbjorn ; Zhang, Yu ; Zhang, Hongrui ; Krishnan, Dileep ; Zhong, Zhicheng ; Niu, Wei ; Carrad, Damon James ; Norrman, Kion ; von Soosten, Merlin ; Jespersen, Thomas Sand ; Shen, Baogen ; Gauquelin, Nicolas ; Verbeeck, Johan ; Sun, Jirong ; Pryds, Nini ; Chen, Yunzhong. / Diluted Oxide Interfaces with Tunable Ground States. In: Advanced Materials. 2019 ; Vol. 31, No. 10.
Bibtex
@article{2c76151f288745189fe8b556c6417a0c,
title = "Diluted Oxide Interfaces with Tunable Ground States",
keywords = "2D electron liquid, anomalous Hall effect, metal-insulator transitions, oxide interfaces, superconductivity",
author = "Yulin Gan and Christensen, {Dennis Valbjorn} and Yu Zhang and Hongrui Zhang and Dileep Krishnan and Zhicheng Zhong and Wei Niu and Carrad, {Damon James} and Kion Norrman and {von Soosten}, Merlin and Jespersen, {Thomas Sand} and Baogen Shen and Nicolas Gauquelin and Johan Verbeeck and Jirong Sun and Nini Pryds and Yunzhong Chen",
note = "[Qdev]",
year = "2019",
month = mar,
day = "8",
doi = "10.1002/adma.201805970",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "10",
}
RIS
TY - JOUR
T1 - Diluted Oxide Interfaces with Tunable Ground States
AU - Gan, Yulin
AU - Christensen, Dennis Valbjorn
AU - Zhang, Yu
AU - Zhang, Hongrui
AU - Krishnan, Dileep
AU - Zhong, Zhicheng
AU - Niu, Wei
AU - Carrad, Damon James
AU - Norrman, Kion
AU - von Soosten, Merlin
AU - Jespersen, Thomas Sand
AU - Shen, Baogen
AU - Gauquelin, Nicolas
AU - Verbeeck, Johan
AU - Sun, Jirong
AU - Pryds, Nini
AU - Chen, Yunzhong
N1 - [Qdev]
PY - 2019/3/8
Y1 - 2019/3/8
KW - 2D electron liquid
KW - anomalous Hall effect
KW - metal-insulator transitions
KW - oxide interfaces
KW - superconductivity
U2 - 10.1002/adma.201805970
DO - 10.1002/adma.201805970
M3 - Journal article
C2 - 30637817
VL - 31
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 10
M1 - 1805970
ER -