Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap similar to 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields similar to 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
Originalsprog | Engelsk |
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Tidsskrift | Nano Letters |
Vol/bind | 21 |
Udgave nummer | 23 |
Sider (fra-til) | 9875-9881 |
Antal sider | 7 |
ISSN | 1530-6984 |
DOI | |
Status | Udgivet - 8 dec. 2021 |
Links
- https://arxiv.org/pdf/2111.11934.pdf
Indsendt manuskript
ID: 299400004