On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers
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Standard
On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. / Brunthaler, G.; Prinz, A.; Lindelof, P.E.
I: Physica E, Nr. 13, 2002, s. 691.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning
Harvard
Brunthaler, G, Prinz, A & Lindelof, PE 2002, 'On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers', Physica E, nr. 13, s. 691.
APA
Brunthaler, G., Prinz, A., & Lindelof, P. E. (2002). On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. Physica E, (13), 691.
Vancouver
Brunthaler G, Prinz A, Lindelof PE. On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. Physica E. 2002;(13):691.
Author
Bibtex
@article{962db9c074c511dbbee902004c4f4f50,
title = "On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers",
author = "G. Brunthaler and A. Prinz and P.E. Lindelof",
year = "2002",
language = "English",
pages = "691",
journal = "Physica E",
publisher = "Elsevier",
number = "13",
}
RIS
TY - JOUR
T1 - On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers
AU - Brunthaler, G.
AU - Prinz, A.
AU - Lindelof, P.E.
PY - 2002
Y1 - 2002
M3 - Journal article
SP - 691
JO - Physica E
JF - Physica E
IS - 13
ER -
ID: 134677