Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.

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Standard

Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. / Olsen, Janus Staun.

I: Journal of Applied Physics, Nr. 86, 1999, s. 6608-6610.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Olsen, JS 1999, 'Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.', Journal of Applied Physics, nr. 86, s. 6608-6610.

APA

Olsen, J. S. (1999). Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. Journal of Applied Physics, (86), 6608-6610.

Vancouver

Olsen JS. Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. Journal of Applied Physics. 1999;(86):6608-6610.

Author

Olsen, Janus Staun. / Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS. I: Journal of Applied Physics. 1999 ; Nr. 86. s. 6608-6610.

Bibtex

@article{cdb9aae074c811dbbee902004c4f4f50,
title = "Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.",
author = "Olsen, {Janus Staun}",
year = "1999",
language = "English",
pages = "6608--6610",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "86",

}

RIS

TY - JOUR

T1 - Grain-size effect on pressure-induced semiconductor-to-metal transition in ZNS.

AU - Olsen, Janus Staun

PY - 1999

Y1 - 1999

M3 - Journal article

SP - 6608

EP - 6610

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 86

ER -

ID: 188289