Doubling the mobility of InAs/InGaAs selective area grown nanowires
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Doubling the mobility of InAs/InGaAs selective area grown nanowires. / Beznasiuk, Daria; Marti-Sanchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Stankevic, Tomas; Rajpalke, Mohana; Christensen, Anna Wulff; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter.
I: Physical Review Materials, Bind 6, Nr. 3, 034602, 16.03.2022.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Doubling the mobility of InAs/InGaAs selective area grown nanowires
AU - Beznasiuk, Daria
AU - Marti-Sanchez, Sara
AU - Kang, Jung-Hyun
AU - Tanta, Rawa
AU - Stankevic, Tomas
AU - Rajpalke, Mohana
AU - Christensen, Anna Wulff
AU - Spadaro, Maria Chiara
AU - Bergamaschini, Roberto
AU - Maka, Nikhil N.
AU - Petersen, Christian Emanuel N.
AU - Carrad, Damon J.
AU - Jespersen, Thomas Sand
AU - Arbiol, Jordi
AU - Krogstrup, Peter
PY - 2022/3/16
Y1 - 2022/3/16
N2 - Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.
AB - Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.
KW - MOLECULAR-BEAM EPITAXY
KW - ELECTRONIC-PROPERTIES
KW - ALLOY SCATTERING
KW - GAAS
KW - DESORPTION
KW - OXIDE
KW - SEGREGATION
KW - SUBSTRATE
KW - SURFACES
KW - GE
U2 - 10.1103/PhysRevMaterials.6.034602
DO - 10.1103/PhysRevMaterials.6.034602
M3 - Journal article
VL - 6
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 3
M1 - 034602
ER -
ID: 302060660