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Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy. / Sørensen, Brian Skov; Aagesen, Martin; Sørensen, Claus Birger; Lindelof, Poul Erik; Martinez, Karen Laurence; Nygård, Jesper.
I:
Applied Physics Letters, Bind 92, Nr. 1, 2008, s. 012119.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Sørensen, BS, Aagesen, M
, Sørensen, CB, Lindelof, PE, Martinez, KL & Nygård, J 2008, '
Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy',
Applied Physics Letters, bind 92, nr. 1, s. 012119.
https://doi.org/10.1063/1.2821372APA
Sørensen, B. S., Aagesen, M.
, Sørensen, C. B., Lindelof, P. E., Martinez, K. L., & Nygård, J. (2008).
Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy.
Applied Physics Letters,
92(1), 012119.
https://doi.org/10.1063/1.2821372Vancouver
Sørensen BS, Aagesen M
, Sørensen CB, Lindelof PE, Martinez KL, Nygård J.
Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy.
Applied Physics Letters. 2008;92(1):012119.
https://doi.org/10.1063/1.2821372Author
Sørensen, Brian Skov ; Aagesen, Martin ; Sørensen, Claus Birger ; Lindelof, Poul Erik ; Martinez, Karen Laurence ; Nygård, Jesper. / Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy. I: Applied Physics Letters. 2008 ; Bind 92, Nr. 1. s. 012119.
Bibtex
@article{d7461270db3b11dd9473000ea68e967b,
title = "Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy",
abstract = "Udgivelsesdato: 2008",
keywords = "Faculty of Science, Nanowires, Semiconductor, Molecular Beam Epitaxy, Indium Arsenide",
author = "S{\o}rensen, {Brian Skov} and Martin Aagesen and S{\o}rensen, {Claus Birger} and Lindelof, {Poul Erik} and Martinez, {Karen Laurence} and Jesper Nyg{\aa}rd",
year = "2008",
doi = "10.1063/1.2821372",
language = "English",
volume = "92",
pages = "012119",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "1",
}
RIS
TY - JOUR
T1 - Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
AU - Sørensen, Brian Skov
AU - Aagesen, Martin
AU - Sørensen, Claus Birger
AU - Lindelof, Poul Erik
AU - Martinez, Karen Laurence
AU - Nygård, Jesper
PY - 2008
Y1 - 2008
N2 - Udgivelsesdato: 2008
AB - Udgivelsesdato: 2008
KW - Faculty of Science
KW - Nanowires
KW - Semiconductor
KW - Molecular Beam Epitaxy
KW - Indium Arsenide
U2 - 10.1063/1.2821372
DO - 10.1063/1.2821372
M3 - Journal article
VL - 92
SP - 012119
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -
